The new 16Gb LPDDR4X DRAM features exceptionally high thermal endurance, with warranties for up to 125degrees Celsius.
26 Apr 2018 | 5099 Views | By Autocar Professional Bureau
Samsung Electronics, part of the South Korea-based Samsung Group, has announced that it has begun the mass production of its 10nm-class 16Gb LPDDR4X DRAM for automobiles.
Samsung Electronics company, one of the world leaders in advanced memory technology, announced that it has begun mass producing 10-nanometer (nm)-class 16-gigabit (Gb) LPDDR4X ...
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Samsung Electronics, part of the South Korea-based Samsung Group, has announced that it has begun the mass production of its 10nm-class 16Gb LPDDR4X DRAM for automobiles.
Samsung Electronics company, one of the world leaders in advanced memory technology, announced that it has begun mass producing 10-nanometer (nm)-class 16-gigabit (Gb) LPDDR4X DRAM for automobiles. The latest LPDDR4X features high performance and energy efficiency while significantly raising the thermal endurance level for automotive applications that often need to operate in extreme environments. Samsung has claimed that the 10nm-class DRAM will also enable the industry’s fastest automotive DRAM-based LPDDR4X interface with the highest density.
Sewon Chun, senior vice president of memory marketing at Samsung Electronics stated,“The 16Gb LPDDR4X DRAM is our most advanced automotive solution yet, offering global automakers outstanding reliability, endurance, speed, capacity and energy efficiency.”
Moving a step beyond its 20nm-class ‘Automotive Grade 2’ DRAM, which can withstand temperatures from -40degree Celsius to 105degree Celsius, Samsung’s 16Gb LPDDR4X is 'Automotive Grade 1' compliant, raising the high-end threshold to 125degree Celsius. Samsung has claimed that the new DRAM satisfies rigorous system thermal cycling tests of global auto manufacturers, further increasing its reliability for a wide variety of automotive applications in many of the world’s challenging environments. It further claims that even at 125degree Celsius, the data processing speed of the DRAM comes in at 4,266 megabits per second (Mbps), a 14 percent increase from the 8Gb LPDDR4 DRAM that is based on 20nm process technology, and the new memory also registers a 30 percent increase in power efficiency.
The DRAM comes with a 256 gigabyte (GB) embedded Universal Flash Storage (eUFS) drive. The 10nm-class 16Gb LPDDR4X DRAM is commercially available in 12Gb, 16Gb, 24Gb and 32Gb capacities. While extending its 10nm-class DRAM offerings, the company also plans on bolstering technology partnerships for automotive solutions that includes ADAS (Advanced Driver Assistance Systems), autonomous driving, infotainment systems and gateways.
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